TPCC8107 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCC8107
Manufacturer	Toshiba ↗ Semiconductor
File Size	275.29 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8107-ToshibaSemiconductor.pdf

(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8107 4. Absolute Maximum Ratings (Note) (T.

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Published: Aug 30, 2014 |