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TPCC8107 - Silicon P-Channel MOSFET

Key Features

  • (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8107 4. Absolute Maximum Ratings (Note) (T.

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Datasheet Details

Part number TPCC8107
Manufacturer Toshiba
File Size 275.29 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCC8107 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) TPCC8107 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8107 4.