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MOSFETs Silicon P-Channel MOS (U-MOS�)
TPCC8107
1. Applications
• Motor Drivers • DC-DC Converters • Switching Voltage Regulators
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPCC8107
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2017-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2023-12-11 Rev.5.0
TPCC8107
4.