TPCC8131 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCC8131
Manufacturer	Toshiba ↗ Semiconductor
File Size	235.15 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8131-ToshibaSemiconductor.pdf

(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCC8131 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (.

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Published: Aug 30, 2014 |