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TPCC8137 - Silicon P-Channel MOSFET

Key Features

  • (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ. ) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage V.

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Datasheet Details

Part number TPCC8137
Manufacturer Toshiba
File Size 230.27 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCC8137 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8137 1. Applications • Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -13 A Drain current (pulsed) (Note 1) IDP -39 Power dissipation (Tc = 25) PD 30 W Power dissipation (t = 10 s) (Note 2) PD 1.