TPCC8137 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCC8137
Manufacturer	Toshiba ↗ Semiconductor
File Size	230.27 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8137-ToshibaSemiconductor.pdf

(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ. ) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage V.

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Published: Aug 30, 2014 |