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TPCP8012 - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 10 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 16.2 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8012 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.6.0 TPCP8012 4. Absolute Maximum Rating.

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Datasheet Details

Part number TPCP8012
Manufacturer Toshiba
File Size 252.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCP8012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS) TPCP8012 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 10 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 16.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8012 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.6.0 TPCP8012 4.