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TPCP8101
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
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TPCP8101
Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package
2.4±0.1 0.475
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 μA)
S
0.65 2.9±0.1
B A
0.05 M B
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 ±8 -5.6 -22.4 1.
TPCP8101 Datasheet
