Datasheet4U Logo Datasheet4U.com

TPCP8109 - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ. ) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4. Absolute Maximum.

📥 Download Datasheet

Datasheet Details

Part number TPCP8109
Manufacturer Toshiba
File Size 256.32 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCP8109 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCP8011 Silicon N-Channel MOSFET Toshiba
TPCP8404 Field Effect Transistor Toshiba
TPCP8511 Silicon NPN Transistor Toshiba
TPCP8512 Silicon NPN Transistor Toshiba
TPCP8513 Silicon NPN Transistor Toshiba

Other Datasheets by Toshiba

Part Number Description
TPCP8101 MOSFET
TPCP8102 MOSFET
TPCP8103-H MOSFET
TPCP8105 MOSFETs
TPCP8106 MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8109 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ.) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4.