TPCP8303 - Field Effect Transistor

Toshiba

Key Features

) ID max (Pulse).
10 t = 1 ms.
Drain current ID 10 ms.
1.
Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
1.
10 VDSS max.
100.
0.1.
0.1 Drain.
source voltage VDS (V) 6 2010-01-14 TPCP8303.

TPCP8303 field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCP8303
Manufacturer	Toshiba
File Size	215.42 KB
Description	Field Effect Transistor
Datasheet	TPCP8303 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TPCP8011	Silicon N-Channel MOSFET	Toshiba
TPCP8404	Field Effect Transistor	Toshiba
TPCP8511	Silicon NPN Transistor	Toshiba
TPCP8512	Silicon NPN Transistor	Toshiba
TPCP8513	Silicon NPN Transistor	Toshiba

Other Datasheets by Toshiba

Part Number	Description
TPCP8301	MOSFET
TPCP8302	MOSFET
TPCP8305	MOSFETs
TPCP8306	MOSFETs
TPCP8001-H	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1 mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B (Q1, Q2 Common) Drain-source voltage Absolute Maximum Ratings (Ta = 25°C) S 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.