Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- - Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1
PS-8
2010-08-03 Rev.1.0
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