Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- - Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1
PS-8
2011-03-14 Rev.2.0
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