Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
- -
- - Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 20 V) Enhancement mode: Vth =
- 0.3 to
- 1.0 V (VDS =
- 10 V, ID =
- 1 mA) Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
0.65 2.9±0.1
0.05 M B
(Q1, Q2 mon)
Drain-source...