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TPCP8303 - Field Effect Transistor

Features

  • ) ID max (Pulse).
  • 10 t = 1 ms.
  • Drain current ID 10 ms.
  • 1.
  • Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
  • 1.
  • 10 VDSS max.
  • 100.
  • 0.1.
  • 0.1 Drain.
  • source voltage VDS (V) 6 2010-01-14 TPCP8303.

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Datasheet Details

Part number TPCP8303
Manufacturer Toshiba
File Size 215.42 KB
Description Field Effect Transistor
Datasheet download datasheet TPCP8303 Datasheet

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Full PDF Text Transcription

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TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1 mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B (Q1, Q2 Common) Drain-source voltage Absolute Maximum Ratings (Ta = 25°C) S 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.
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