Datasheet4U Logo Datasheet4U.com

TPCP8305 - MOSFETs

Key Features

  • (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8305 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-so.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCP8011 Silicon N-Channel MOSFET Toshiba
TPCP8404 Field Effect Transistor Toshiba
TPCP8511 Silicon NPN Transistor Toshiba
TPCP8512 Silicon NPN Transistor Toshiba
TPCP8513 Silicon NPN Transistor Toshiba

Other Datasheets by Toshiba

Part Number Description
TPCP8301 MOSFET
TPCP8302 MOSFET
TPCP8303 Field Effect Transistor
TPCP8306 MOSFETs
TPCP8001-H MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8305 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8305 4.