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TPCP8504
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TPCP8504
High Speed Switching Applications DC-DC Converter Applications
• • • High DC current gain : hFE = 400 to 1000 (IC = 0.2 A)
2.4±0.1
Unit: mm
0.33±0.05 0.05 M A
8 5
High-speed switching : tf = 25 ns (typ.)
0.475
1 4
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB Pc Tj Tstg Rating 20 10 7 2.0 3.5 0.2 2.8 1.2 150 −55 to 150 Unit V V V A A W °C °C
S
B A
0.65 2.9±0.1
0.05 M B
0.8±0.05 0.025
S
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12 1.12 -0.12 0.28 +0.1 -0.11
+0.13
+0.
TPCP8504 Datasheet
