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TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8510
TPCP8510
High-Speed, High-Voltage Switching Applications DC-DC Converter Applications
• High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ)
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.475
1
4
0.65
2.9±0.1
B
0.05 M B
A
0.8±0.05
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEX
150
V
VCEO
120
V
Emitter-base voltage
VEBO
7
V
DC (Note 1)
IC
Collector current
Pulse (Note 1)
ICP
1.0 A
2.0
Base current
IB
0.1
A
Collector power dissipation
t = 10s DC
2.25 PC (Note 2)
1.
TPCP8510 Datasheet
