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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
TPCP8601
TPCP8601
High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
• High DC current gain: hFE = 200 to 500 (IC = −0.6 A) • Low collector-emitter saturation: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 35 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
0.475
1
4
0.65 2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.11
Characteristic
Symbol
Rating
Unit
1.12+-00..1132
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
DC (Note 1)
IC
Collector current
Pulse (Note 1 )
ICP
−4.0 A
−7.0
1.12+-00..1132
1.Collector 2.Collector 3.
TPCP8601 Datasheet
