Toshiba TPCP8608
Silicon PNP Transistor
| Part No. | TPCP8608 |
|---|---|
| Datasheet | TPCP8608 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
● High-Speed Switching● DC-DC Converters 2.
FEATURES
(1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ.) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-11 2023-09-27 Rev.1.0 TPCP8608 4.ABSOLUTE MAXIMUM RATINGS
(Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V Collector current (DC) (Note 1) IC -3 A Collector current (pulsed) (Note 1) ICP -5 Base current IB -0.3 A Collector power dissipation (Note 2) PC 1.0 W Collector power dissipation (Note 3) 2.0 Junction temperature Storage temperature Tj 150 Ts...
