Toshiba TPCP8602
Silicon PNP Transistor
| Part No. | TPCP8602 |
|---|---|
| Datasheet | TPCP8602 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
DC-DC ConverterAPPLICATIONS
Strobe FlashAPPLICATIONS
0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1● High DC current gain: hFE = 200 to 500 (IC = −0.3 A)
● Low collector-emitter saturation: VCE (sat) = −0.2 V (max)
● High-speed switching: tf = 90 ns (typ.)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit 0.475 1 4 0.65 2.9±0.1 S 0.025 S 0.17±0.02 B 0.05 M B A 0.8±0.05 0.28 +0.1 -0.11 Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC (Note 1) IC Collector current Pulse (Note 1 ) ICP −2.5 A −4.0 Base current IB −0.25 A Collector power dissipation (t = 10s) t = 10s DC 3.0 PC (Note 2) 1.25 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C 1.12+-00..1132 1.12+-00..1132 1.Collector 2.Collector 3.Collector 4.Base 5.Emitter 6.Collector 7.Collector 8.Collector 0.28 +0.1 -0.11 JEDEC ― JEITA ― TOSHIBA 2-3V1A Weight: 0.017 g (typ.) Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.
