TPCP8604
TOSHIBA Transistor Silicon PNP Diffused Type
High-Voltage Switching Applications
High breakdown voltage: VCEO =
- 400 V
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 400
Collector-emitter voltage
VCEO
- 400
Emitter-base voltage
VEBO
- 7
Collector current
DC (Note 1)
Pulse(Note 1)
- 0.3 A
- 1
Base current
- 0.25
Collector power dissipation t=10s
- 2.2
PC (Note 2)
- 1.1
Junction...