• Part: TPCP8605
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 342.27 KB
Download TPCP8605 Datasheet PDF
Toshiba
TPCP8605
Features (1) High DC current gain: h FE = 200 to 500 (VCE = -2 V, IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 m A) (3) High-speed switching: tf = 60 ns (typ.) (IC = -1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2023-01 2023-01-16 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) -5 Collector current (pulsed) (Note 1) -10 Base...