Toshiba TPCP8606
Silicon PNP Transistor
| Part No. | TPCP8606 |
|---|---|
| Datasheet | TPCP8606 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
● High-Speed Switching● DC-DC Converters 2.
FEATURES
(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8606 4.ABSOLUTE MAXIMUM RATINGS
(Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V Collector current (DC) (Note 1) IC -4 A Collector current (pulsed) (Note 1) ICP -8 A Base current IB -0.4 A Collector power dissipation (Note 2) PC 1.0 W Collector power dissipation Junction temperature Storage temperature (Note 3) PC...
