• Part: TPCP8606
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 303.12 KB
Download TPCP8606 Datasheet PDF
Toshiba
TPCP8606
Features (1) High DC current gain: h FE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2023-01 2023-01-16 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) -4 Collector current (pulsed) (Note 1) -8 Base...