Datasheet Details
| Part number | TP90H050WS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.24 MB |
| Description | 900V GaN FET |
| Datasheet |
 TP90H050WS Datasheet
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| Part number | TP90H050WS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.24 MB |
| Description | 900V GaN FET |
| Datasheet |
TP90H050WS Datasheet
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The TP90H050WS 900V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP90H050WS 900V GaN FET in TO-247 (source tab) Preliminary Datasheet.
| Part Number | Description |
|---|---|
| TP90H180PS | 900V GaN FET |