• Part: AH322
  • Description: 2W High Linearity InGaP HBT Amplifier
  • Manufacturer: TriQuint Semiconductor
  • Size: 481.85 KB
Download AH322 Datasheet PDF
TriQuint Semiconductor
AH322
Features - 400 - 2700 MHz - +33 d Bm P1d B - +50 d Bm Output IP3 - 13.4 d B Gain @ 2140 MHz - 500 m A Quiescent Current - +5 V Single Supply - MTTF > 100 Years - Lead-free/Ro HS-pliant SOIC-8 Package Product Description The AH322 is a high dynamic range driver amplifier in a low-cost surface mount package. The In Ga P/Ga As HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33 d Bm of pressed 1d B power. It is housed in a leadfree/Ro HS-pliant SOIC-8 package. All devices are 100% RF and DC tested. The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band. Functional Diagram 1 8 2 3 Applications - - - - Final stage amplifiers...