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TriQuint Semiconductor

AH322 Datasheet Preview

AH322 Datasheet

2W High Linearity InGaP HBT Amplifier

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AH322
www.D2aWtaSHheiegt4hU.Lcoimnearity InGaP HBT Amplifier
Product Features
Product Description
Functional Diagram
400 – 2700 MHz
+33 dBm P1dB
+50 dBm Output IP3
13.4 dB Gain @ 2140 MHz
500 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Lead-free/RoHS-compliant
SOIC-8 Package
Applications
The AH322 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +50 OIP3 and +33
dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Final stage amplifiers for Repeaters
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
18
27
36
45
Function
Iref
Input
Output / Vcc
Vbias
GND
GND
Pin No.
8
3
6, 7
1
Backside Paddle
2, 4, 5
Specifications (1)
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain dB
Input R.L.
dB
Output R.L.
dB
Output P1dB
Output IP3 (2)
WCDMA Channel Power (3)
@ -50 dBc ACLR
Noise Figure
dBm
dBm
dBm
dB
Vcc, Vbias
Quiescent Collector Current (4)
V
mA
Iref mA
Min
400
Typ
2140
13.4
14.7
7.8
+33
+50
+24.1
4.8
+5
500
30
Max
2700
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940
MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,
1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to
calculate the OIP3 using a 2:1 rule.
3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%
Probability.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6 and 7.
Typical Performance
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
WCDMA Channel Power (3)
@ -50 dBc ACLR
Output P1dB
Output IP3 (2)
Noise Figure
Vcc, Vbias
Iref
Quiescent Collector Current
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
Typical
940 1960 2140
19.4 14.1 13.4
18 11.3 14.7
8.5 11.8 7.8
+23.6 +24.4 +24.1
+33.0
+47.6
8.5
600
+33.3
+50.2
4.5
+5
30
500
+33
+50
4.8
500
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power, CW, 50 , T = 25ºC
Device Voltage, Vcc, Vbias
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature, Tj
Rating
-65 to +150 °C
Input P10 dB
+8 V
1400 mA
8W
18.6 °C / W
+200 °C
Ordering Information
Part No.
AH322-S8G
AH322-S8PCB900
AH322-S8PCB1960
AH322-S8PCB2140
Description
2W High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
920 - 960 MHz Evaluation Board
1930 - 1990 MHz Evaluation Board
2110 - 2170 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
.
TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
April 2009




TriQuint Semiconductor

AH322 Datasheet Preview

AH322 Datasheet

2W High Linearity InGaP HBT Amplifier

No Preview Available !

AH322
www.D2aWtaSHheiegt4hU.Lcoimnearity InGaP HBT Amplifier
45
40
35
30
25
20
15
10
5
0
-5
0
Typical Device Data
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, calibrated to device leads)
Gain and Maximum Stable Gain
DB(MSG())
De_emebedded S_parameter
DB(|S(2,1)|)
De_emebedded S_parameter
2.14 GHz
7.19 dB
2.14 GHz
22.7 dB
S11
Swp Max
4GHz
3.0
2.14 GHz
r 0.493722
x 0.825153
4. 0
5.0
10 .0
-0.2
-0.2
S22
2.14 GHz
r 0.0838672
x 0.36526
Swp Max
4GHz
3.0
4. 0
5.0
10 .0
0.5 1 1.5 2 2.5 3
Frequency (GHz)
-0 .4
Swp Min
0.01GHz
-0.4
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the blue line [DB (GMAX)].
The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icq = 500 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang)
50
-0.74
-174.58
29.75
109.51
-43.47
25.51
100
-0.53
-179.31
24.21
98.59
-43.22
17.83
200
-0.45
176.71
18.46
89.55
-42.49
8.135
400
-0.44
170.07
12.77
80.82
-42.04
5.31
600
-0.56
163.11
9.78
73.71
-41.41
10.52
700
-0.61
159.9
8.73
69.49
-41.21
11.31
800
-0.64
156.03
7.94
65.68
-40.26
12.5
1000
-0.78
147.66
6.8
56.95
-39.65
7.88
1200
-0.87
138.49
6.11
46.99
-38.34
2.45
1400
-1.08
128.32
5.8
36.79
-37.99
-3.1
1600
-1.4 117.39 5.83
25.05
-37.52
-14.57
1800
-1.94
106.19
6.17
10.83
-37.39
-27.07
2000
-3.2 95.9
6.8
-7.89
-37.45
-42.22
2200
-5.84
94.01
7.36
-33.75
-38.56
-69.38
2400
-6.52
112.96
6.5
-64.88
-41.93
-115.31
2600
-4.45
121.06
4.77
-92.83
-41.83
167.17
2800
-2.44
117.78
2.24
-121.06
-38.13
103.07
3000
-1.26
108.49
-1.12
-142.85
-34.99
62.15
S22 (dB)
-1.15
-1.22
-1.19
-1.22
-1.18
-1.12
-1.17
-1.22
-1.26
-1.33
-1.49
-1.46
-1.41
-1.21
-0.9
-0.4
-0.27
-0.35
S22 (ang)
-135.3
-157.31
-170.3
-178.39
176.07
173.93
171.69
166.82
162.15
157.29
152.31
147.31
143.05
138.4
133.24
126.56
119.41
112.36
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments.
TriQuint Semiconductor, Inc Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
.
April 2009


Part Number AH322
Description 2W High Linearity InGaP HBT Amplifier
Maker TriQuint Semiconductor
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AH322 Datasheet PDF






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