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TGA2585-SM - 18W GaN Power Amplifier

General Description

TriQuint’s TGA2585-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz.

The TGA2585-SM is designed using TriQuint’s production 0.25-μm GaN on SiC process.

Key Features

  • Frequency Range: 2.7 - 3.7 GHz.
  • PSAT: 42.5 dBm.
  • PAE: > 50 %.
  • Small Signal Gain: 32 dB.
  • Return Loss: > 10 dB.
  • Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA, VG =.
  • 2.5 V Typical.
  • Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 RF OUT 3 4 5 6 7 8 24 23 22 RF IN 21 20 19 18 17 9 10 11 12 13 14 15 16 General.

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Datasheet Details

Part number TGA2585-SM
Manufacturer TriQuint Semiconductor
File Size 1.66 MB
Description 18W GaN Power Amplifier
Datasheet download datasheet TGA2585-SM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications • Commercial and Military Radar TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Product Features • Frequency Range: 2.7 - 3.7 GHz • PSAT: 42.5 dBm • PAE: > 50 % • Small Signal Gain: 32 dB • Return Loss: > 10 dB • Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA, VG = −2.5 V Typical • Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 RF OUT 3 4 5 6 7 8 24 23 22 RF IN 21 20 19 18 17 9 10 11 12 13 14 15 16 General Description TriQuint’s TGA2585-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2585-SM is designed using TriQuint’s production 0.25-μm GaN on SiC process. The TGA2585-SM typically provides 42.