TGA2612 Datasheet GaN LNA

Manufacturer: TriQuint Semiconductor

Datasheet Details

TriQuint’s TGA2612 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).

Covering 6–12GHz, the TGA2612 typically provides P1dB of 20dBm, greater than 22dB of small signal gain, 1.5dB noise figure (mid-band) and 29dBm OTOI.

In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness.

Applications  Commercial and Military Radar  Communications TGA2612 6-12 GHz GaN LNA.

Frequency Range: 6.
12GHz.
NF: < 1.8dB (1.5dB midband).
P1dB: 20dBm.
OTOI: 29dBm.
Small Signal Gain: >22dB.
Return Loss: >7dB.
Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical.
Chip Dimensions: 2.1 x 1.5 x 0.10mm Performance features are typical across frequency, under recommended bias and at 25°C carrier backside. Functional Block Diagram 2 J1 1 RF In 3 J2 RF Out 4 General.

Part Number	Description
TGA2612-SM	GaN LNA
TGA2611	GaN LNA
TGA2611-SM	GaN LNA
TGA2613-SM	S-Band High Linearity LNA
TGA2614-SM	S-Band High Gain LNA
TGA2618	GaAs LNA
TGA2618-SM	GaAs LNA
TGA2600	X-band Ultra Low Noise Amplifier
TGA2601-SM	800 - 3000 MHz High IP3 Dual pHEMT
TGA2602-SM	800 - 3000MHz High IP3 Dual LNA