TGA2622-CP - GaN Power Amplifier

TriQuint Semiconductor

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Datasheet Details

Part number	TGA2622-CP
Manufacturer	TriQuint Semiconductor
File Size	552.81 KB
Description	GaN Power Amplifier
Datasheet	TGA2622-CP-TriQuintSemiconductor.pdf

TGA2622-CP Product details

Description

TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process. 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.

Features

Frequency Range: 9.
10 GHz.
PSAT: 45.5 dBm @ PIN = 18 dBm.
PAE: >43% @ PIN = 18 dBm.
Power Gain: 27.5 dB @ PIN = 18 dBm.
Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %).
Package Dimensions: 15.2 x 15.2 x 3.5 mm.
Package base is pure Cu offering superior thermal management Functional Block Diagram 1 10 29 38 47 56 General.

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Published: Apr 2, 2016 |