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TGA2622-CP Datasheet GaN Power Amplifier

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number TGA2622-CP
Manufacturer TriQuint Semiconductor
File Size 552.81 KB
Description GaN Power Amplifier
Download TGA2622-CP Download (PDF)

General Description

TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process.

Operating from 9 – 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.

The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management.

Overview

Applications  Weather and Marine Radar TGA2622-CP 9 – 10 GHz 35 W GaN Power Amplifier.

Key Features

  • Frequency Range: 9.
  • 10 GHz.
  • PSAT: 45.5 dBm @ PIN = 18 dBm.
  • PAE: >43% @ PIN = 18 dBm.
  • Power Gain: 27.5 dB @ PIN = 18 dBm.
  • Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %).
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Functional Block Diagram 1 10 29 38 47 56 General.

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