TQP15 Key Features
- D-Mode, -1.0 V Vp
- InGaAs Active Layer pHEMT Process
- 0.15 µm Low Cost Optical Lithography Gates
- High Density Interconnects
- 1 Global
- 1 Local
- High-Q Passives
- Thin Film Resistors
- High Value Capacitors (620 pF/mm2
- Backside Vias Optional