TSB4N60M - N-Channel MOSFET

Name: TSB4N60M
SKU: TSB4N60M-1108712

Truesemi

The TSB4N60M by Truesemi is a N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TSB4N60M
Manufacturer	Truesemi
File Size	228.67 KB
Description	N-Channel MOSFET
Datasheet	TSB4N60M-Truesemi.pdf
Additional preview pages of the TSB4N60M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Puls.

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Published: Apr 13, 2017 |