TSB4N60M mosfet equivalent, n-channel mosfet.
* 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V
* Low gate charge ( typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved d.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
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