TSB65R500S1 - N-Channel MOSFET
TSB65R500S1 Features
* 700V @TJ = 150 ℃
* Typ. RDS(on) = 0.45Ω
* Ultra Low gate charge (typ. Qg = 35nC)
* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Dra