TSD18N20M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

TSD18N20M n-channel mosfet by Truesemi - Datasheet Preview

Datasheet Details

Part number	TSD18N20M
Manufacturer	Truesemi
File Size	422.61 KB
Description	N-Channel MOSFET
Download	TSD18N20M Download (PDF)

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSD18N20M TSD18N20M 200V N-Channel MOSFET General.

Key Features

18A,200V,Max. RDS(on)=0.17 Ω @ VGS =10V.
Low gate charge(typical 22nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current TC = 25℃ TC = 100℃ IDM Pulsed Drain Current (Note 1) IAS Single Pulsed Avalanche Current (Note 2) EAS Single Pulsed Avalanche Energy (No.

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