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TSD1N60M - N-Channel MOSFET

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 1.0A,600V,Max. RDS(on)=11.5 Ω @ VGS =10V.
  • Low gate charge(typical 5.2nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avala.

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Datasheet Details

Part number TSD1N60M
Manufacturer Truesemi
File Size 386.64 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD1N60M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V • Low gate charge(typical 5.