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TSD18N20M - N-Channel MOSFET

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 18A,200V,Max. RDS(on)=0.17 Ω @ VGS =10V.
  • Low gate charge(typical 22nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current TC = 25℃ TC = 100℃ IDM Pulsed Drain Current (Note 1) IAS Single Pulsed Avalanche Current (Note 2) EAS Single Pulsed Avalanche Energy (No.

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Datasheet Details

Part number TSD18N20M
Manufacturer Truesemi
File Size 422.61 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD18N20M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD18N20M TSD18N20M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 18A,200V,Max.RDS(on)=0.