TSD4N60M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSD4N60M
Manufacturer	Truesemi
File Size	338.89 KB
Description	N-Channel MOSFET
Datasheet	TSD4N60M Datasheet
Additional preview pages of the TSD4N60M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

2.8A,600V,Max. RDS(on)=2.50 Ω @ VGS =10V.
Low gate charge(typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

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Published: Apr 12, 2017 |