datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Truesemi
Truesemi

TSD70R750S1 Datasheet Preview

TSD70R750S1 Datasheet

N-Channel MOSFET

No Preview Available !

TSD70R750S1 pdf
TSD70R750S1/TSU70R750S1
700V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
750V @TJ = 150
• Typ. RDS(on) = 0.68Ω
• Ultra Low gate charge (typ. Qg = 25nC)
• 100% avalanche tested
TSD70R750S1
TSU70R750S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25)
TJ, TSTG
TL
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
700
7*
4.4*
21
±30
86
1.7
0.2
15
63
-55 to +150
300
Value
2.0
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Unit
/W
/W
/W
www.truesemi.com



Truesemi
Truesemi

TSD70R750S1 Datasheet Preview

TSD70R750S1 Datasheet

N-Channel MOSFET

No Preview Available !

TSD70R750S1 pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 700V, VGS = 0V
-TJ = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
700
--
--
--
--
--
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5A
2.5
--
gFS Forward Trans conductance VDS = 40V, ID = 7A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 3.5A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 3.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 3.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 3.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=1.7A, VDD=50V, Starting TJ=25
3. ISD≤7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
750
0.6
--
10
--
--
3.5
0.68
6
380
110
7
13
10
85
14
25
2.0
2.7
--
--
0.9
190
2.3
Max
--
--
--
1
--
100
-100
4.5
0.75
--
--
--
--
--
--
--
--
--
--
--
7
21
1.5
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com


Part Number TSD70R750S1
Description N-Channel MOSFET
Maker Truesemi
Total Page 9 Pages
PDF Download
TSD70R750S1 pdf
TSD70R750S1 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 TSD70R750S1 N-Channel MOSFET Truesemi
Truesemi
TSD70R750S1 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy