TSD80R1K3S1 mosfet equivalent, n-channel mosfet.
* 850V @TJ = 150 ℃ * Typ. RDS(on) = 1.1Ω * Ultra Low gate charge (typ. Qg = 15nC) * 100% avalanche tested TSD80R1K3S1 TSU80R1K3S1 TO-252 Absolute Maxim.
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