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TSF12N60MS Datasheet Preview

TSF12N60MS Datasheet

N-Channel MOSFET

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TSF12N60MS pdf
TSP12N60MS / TSF12N60MS
600V N-Channel MOSFET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
September, 2013
SJ-FET
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.4Ω
• Ultra Low Gate Charge (typ. Qg = 30nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
-Derate above 25℃
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
©2012 True Semiconductor Corporation
TSP12N60MS / TSF12N60MS Rev.1.0
TSP12N60MS TSF12N60MS
600
12 12*
8.5 8.5*
40 40*
±30
120
2
60
205
1.67
4.5
35
0.3
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
TSP12N60MS
0.6
0.5
62
TSF12N60MS
6
--
62
Unit
℃/W
℃/W
℃/W



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TSF12N60MS Datasheet Preview

TSF12N60MS Datasheet

N-Channel MOSFET

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TSF12N60MS pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0V, ID = 250µA, TJ = 25
VGS = 0V, ID = 250µA, TJ = 150
ID = 250µA, Referenced to 25
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VDS = 600V, VGS = 0V VDS = 480V,
TC = 125
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5A
gFS
Forward Transconductance
VDS = 40V, ID = 5A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 5A RG = 20Ω(Note 4,
5)
VDS = 480V, ID = 10A VGS = 10V (Note
4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 12A
trr
Reverse Recovery Time
VGS = 0V, IS = 12A dIF/dt =100A/µs
Qrr
Reverse Recovery Charge
(Note 4)
Min
600
2.5
Typ
650
0.6
0.4
16
600
120
55
25
55
70
40
35
5
18
240
3.1
Max
1
10
100
-100
4.5
0.43
800
200
45
11
40
1.5
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH, IAS=2A, VDD=150V, Starting TJ=25 ℃
3. ISD≤12A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
©2012 True Semiconductor Corporation
TSP12N60MS / TSF12N60MS Rev.1.0


Part Number TSF12N60MS
Description N-Channel MOSFET
Maker Truesemi
Total Page 6 Pages
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