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TSF20N50M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSF20N50M
Manufacturer Truesemi
File Size 526.90 KB
Description N-Channel MOSFET
Download TSF20N50M Download (PDF)

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSF20N50M TSF20N50M 500V N-Channel MOSFET General.

Key Features

  • 20A,500V,Max. RDS(on)=0.26Ω @ VGS =10V.
  • Low gate charge(typical 45nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (L=0.4mH) Power Dissipation (TC = 25℃) Operating a.

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