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TSF20N60MR Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSF20N60MR TSF20N60MR 600V N-Channel MOSFET General.

Datasheet Details

Part number TSF20N60MR
Manufacturer Truesemi
File Size 398.32 KB
Description N-Channel MOSFET
Datasheet TSF20N60MR-Truesemi.pdf

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 20A,600V,RDS(on)=0.36 Ω @ VGS =10V.
  • Low gate charge(typical 57nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note.

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TSF20N60MR Distributor