TSF60R650S1 mosfet equivalent, n-channel mosfet.
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.58Ω
* Ultra Low gate charge (typ. Qg = 25nC)
* 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM V.
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduct.
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