TSF730M Datasheet | Truesemi

TSP730M / TSF730M 400V N-Channel MOSFET General Description This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features - 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V - Low gate charge ( typical 18n C) - Fast wsitching - 100% avalanche tested - Improved dv/dt capability {D TO-220 GD S TO-220F - ◀▲ {G - -...