TSF730M Key Features
- 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V
- Low gate charge ( typical 18nC)
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
- Part: TSF730M
- Manufacturer: Truesemi
- Size: 264.78 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSF70R1K1S1 | N-Channel MOSFET |
| TSF70R210S1 | N-Channel MOSFET |
| TSF70R340S1 | N-Channel MOSFET |
| TSF70R450S1 | N-Channel MOSFET |
| TSF70R750S1 | N-Channel MOSFET |
TSF730M Description
This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br...