TSI12N60M Datasheet, Truesemi

- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-.

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in .