Datasheet Details
| Part number | TSI4N60M |
|---|---|
| Manufacturer | Truesemi |
| File Size | 228.67 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSI4N60M Datasheet
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General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V.
- Low gate charge ( typical 16nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Puls.