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TSI12N60M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

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Datasheet Details

Part number TSI12N60M
Manufacturer Truesemi
File Size 316.43 KB
Description N-Channel MOSFET
Datasheet download datasheet TSI12N60M Datasheet
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TSB12N60M / TSI12N60M TSB12N60M / TSI12N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 12A, 600V, RDS(on) = 0.
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