Datasheet4U Logo Datasheet4U.com

TSI10N65M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

📥 Download Datasheet

Datasheet preview – TSI10N65M

Datasheet Details

Part number TSI10N65M
Manufacturer Truesemi
File Size 315.01 KB
Description N-Channel MOSFET
Datasheet download datasheet TSI10N65M Datasheet
Additional preview pages of the TSI10N65M datasheet.

📁 Similar Datasheet

  • TSI10N - DC/DC Converter - TSI-10N Series 10 Watt (TRACO Electronic)
  • TSI106G - PowerPC Host Bridge (Tundra Semiconductor)
  • TSI106G-xxx - PowerPC Host Bridge (Tundra Semiconductor)
  • TSI10H100CW - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSI10H120CW - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSI10H150CW - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSI10H200CW - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSI180B1 - TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE (STMicroelectronics)
  • TSI-10N - DC/DC Converter - TSI-10N Series 10 Watt (TRACO Electronic)
  • TSI-15N - Step-Down DC-DC Converter (TRACO Electronic)
Other Datasheets by Truesemi

Full PDF Text Transcription

Click to expand full text
TSB10N65M / TSI10N65M TSB10N65M / TSI10N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 10A, 650V, RDS(on) = 0.
Published: |