TSP12N60MS Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.4Ω
- Ultra Low Gate Charge (typ. Qg = 30nC)
- 100% avalanche tested
- Part: TSP12N60MS
- Manufacturer: Truesemi
- Size: 913.68 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSP12N60M | 600V N-Channel MOSFET |
| TSP12N65M | N-Channel MOSFET |
| TSP10N60M | 600V N-Channel MOSFET |
| TSP10N60S | N-Channel MOSFET |
| TSP10N65M | N-Channel MOSFET |
TSP12N60MS Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching...