TSP12N60MS mosfet equivalent, n-channel mosfet.
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.4Ω
* Ultra Low Gate Charge (typ. Qg = 30nC)
* 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM VG.
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.
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