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TSP10N65M - N-Channel MOSFET

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 10.0A,650V,Max. RDS(on)=1.0Ω @ VGS =10V.
  • Low gate charge(typical 48nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval.

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Datasheet Details

Part number TSP10N65M
Manufacturer Truesemi
File Size 1.22 MB
Description N-Channel MOSFET
Datasheet download datasheet TSP10N65M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSP10N65M/TSF10N65M TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 10.0A,650V,Max.RDS(on)=1.