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TSP12N60MS - N-Channel MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.4Ω.
  • Ultra Low Gate Charge (typ. Qg = 30nC).
  • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avala.

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Datasheet Details

Part number TSP12N60MS
Manufacturer Truesemi
File Size 913.68 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP12N60MS Datasheet

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Full PDF Text Transcription (Reference)

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TSP12N60MS / TSF12N60MS 600V N-Channel MOSFET TSP12N60MS / TSF12N60MS 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. September, 2013 SJ-FET Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.4Ω • Ultra Low Gate Charge (typ.