Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @TJ = 150 ℃.
- Typ. RDS(on) = 0.4Ω.
- Ultra Low Gate Charge (typ. Qg = 30nC).
- 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avala.
TSP12N60MS Datasheet
