TSP11N60S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching...
TSP11N60S Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.38Ω
- Ultra Low Gate Charge (typ. Qg = 35nC)
- 100% avalanche tested
- Rohs pliant