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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 30-V (D-S) MOSFET
4435
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.020 @ VGS = −10 V −30
0.030 @ VGS = −4.5 V
ID (A)
−8.0 −5.0
FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS
Compliant
APPLICATIONS D Load Switches D Battery Switch
Available
SO-8
S1 S2 S3 G4
Top View Ordering Information: 4435
8D 7D 6D 5D
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage Gate-Source Voltage
VDS −30 VGS "20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−8.
4435 Datasheet
