MA4BPS301 pads equivalent, pin diode chips with offset bond pads.
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* Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires Rugged Silicon-Glass Construction Silicon Nitride Passiva.
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Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage Incident R.
These silicon - glass PIN diode chips are fabricated with M/A-COM’s patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads al.
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