Datasheet4U Logo Datasheet4U.com

MA4BN1840-2 - Monolithic HMIC Integrated Dual Bias Network

📥 Download Datasheet

General Description

The MA4BN1840-2 device is a fully monolithic broadband bias network utilizing M/A-COM's HMIC TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.

This process allows the incorporation of silicon pedestals that form vias by imbedding them in low loss, low dispersion glass.

By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high performance with exceptional repeatability through millimeter frequencies.

Overview

Monolithic HMIC Integrated Dual Bias Network 18 - 40 GHz V 1.

Key Features

  • n n n n n MA4BN1840-2 Chip Layout Broad Bandwidth Specified for 18 to 40 GHz Useable from 15 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction.

More Datasheets from Tyco Electronics (now TE Connectivity)

Part Number Description
MA4BN1840-1 Monolithic HMIC Integrated Network
MA44600 Silicon Step Recovery Diodes
MA44700 Surface Mount Low Power Step Recovery Diodes
MA44767 Surface Mount Low Power Step Recovery Diodes
MA44768 Surface Mount Low Power Step Recovery Diodes
MA44769 Surface Mount Low Power Step Recovery Diodes
MA44781 Dual Anti- Parallel Pair PIN Diode
MA45400 Si Abrupt Tuning Varactor Diode
MA4543x Si Abrupt Tuning Varactor Diode
MA4544x Si Abrupt Tuning Varactor Diode