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MA4AGSW2 - AlGaAs SP2T PIN Diode Switch

Description

M/A-COM’s MA4AGSW2 is an Aluminum-Gallium-Arsenide anode enhanced, SP2T PIN diode switch.

AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz.

Features

  • Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n MA4AGSW2 Layout.

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Full PDF Text Transcription

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AlGaAs SP2T PIN Diode Switch V 1.00 MA4AGSW2 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n MA4AGSW2 Layout Description M/A-COM’s MA4AGSW2 is an Aluminum-Gallium-Arsenide anode enhanced, SP2T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz.
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