MA4AGSW2 Description
M/A-’s MA4AGSW2 is an Aluminum-Gallium-Arsenide anode enhanced, SP2T PIN diode switch. AlGaAs anodes, which utilize M/A-’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.